Kushanda kweheterojunction cell kwe26.6% paP-type silicon wafers kwave kuwanikwa.

Iyo heterojunction yakaumbwa paamorphous/crystalline silicon (a-Si:H/c-Si) interface ine yakasarudzika yemagetsi zvivakwa, inokodzera silicon heterojunction (SHJ) masero ezuva. Kubatanidzwa kwe-ultra-thin a-Si: H passivation layer yakawana yakakwirira yakavhurika-circuit voltage (Voc) ye750 mV. Uyezve, iyo a-Si: H yekubata layer, yakashongedzwa nen-mhando kana p-mhando, inogona kupenya muchikamu chakasanganiswa, ichidzikisa kunyudzwa kweparasitic uye kuwedzera mutakuri wekusarudza uye kugona kuunganidza.

LONGi Green Energy Technology Co, Ltd.'s Xu Xixiang, Li Zhenguo, nevamwe vakawana 26.6% inoshanda SHJ solar cell paP-mhando silicon wafers. Vanyori vakashandisa phosphorus diffusion getterment pretreatment strategy uye vakashandisa nanocrystalline silicon (nc-Si:H) kune vanotakura-vanosarudza, vachiwedzera zvakanyanya kushanda kweP-type SHJ solar cell kusvika 26.56%, nokudaro vachigadzira bhenji idzva rekuita kweP. -mhando yesilicon solar masero.

Vanyori vanopa hurukuro yakadzama pamusoro pekugadzirisa kwechigadzirwa uye photovoltaic performance performance. Pakupedzisira, ongororo yekurasikirwa kwesimba yakaitwa kuti ione nzira yekuvandudza yeramangwana yeP-mhando SHJ solar cell tekinoroji.